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Hydrogen silsesquioxane bilayer resist process for low-voltage electron beam lithography
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Paper Abstract

Namatsu, van Delft, and others have reported printing exceptionally small features using high voltage (>50kV) electron beam exposure of hydrogen silsesquioxane (HSQ). They also reported that HSQ has very high exposure dose requirements (~2000(mu) C/cm2 at 100kV). We have explored the utility of HSQ as a resist for low-voltage electron beam lithography. Because low energy electrons have a very limited penetration depth, a thin film imaging technique must be employed in conjunction with anisotropic oxygen reactive ion etching to generate the high aspect-ratio features required to provide adequate etch resistance for subsequent image transfer steps. HSQ's exceptionally low oxygen plasma etch rate makes it an excellent top layer for a bilayer process of this sort. High resolution, high aspect ratio images were printed with this system using 1kV electrons with an imaging dose of less than 60 (mu) C/cm2. The resulting features have very smooth sidewalls. Monte Carlo simulations have been performed for the exposure process and compared to experimental results.

Paper Details

Date Published: 24 July 2002
PDF: 9 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474194
Show Author Affiliations
Andrew Thomas Jamieson, Univ. of Texas/Austin (United States)
C. Grant Willson, Univ. of Texas/Austin (United States)
Yautzong Hsu, Etec Systems, Inc. (United States)
Alan D. Brodie, Etec Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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