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Proceedings Paper

Development of 193-nm B.A.R.C.s for dual damascene applications
Author(s): Hengpeng Wu; Zhong Xiang; Eleazar Gonzalez; Jianhui Shan; Shuji Ding; Wen-Bing Kang; Aritaka Hishida
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Paper Abstract

Full and/or partial filling of 193 nm antireflective materials in contact holes is required for dual damascene applications. One of the major challenges for via filling is to minimize various fill bias associated with via size, via pitches and wafer size to an acceptable level. Toward this aim, various formulations were prepared and tested on different types of wafers using different processing conditions. It has been found that both the properties of the filling materials (e.g., molecular weights, glass transition temperatures, etc.) and processing conditions (e.g., spinning speed, dispense modes, baking temperatures, etc.) affect the filling behaviors. This paper presents our recent progress in the development of 193 nm B.A.R.C. materials designed for the dual damascene process. Through screening of the B.A.R.C. materials and optimization of the processing parameters, we have successfully developed two types of B.A.R.C. materials, namely, AZ EXP ArF-2P1 and AZ EXP ArF-2P5A, both of which show good filling performance.

Paper Details

Date Published: 24 July 2002
PDF: 7 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474188
Show Author Affiliations
Hengpeng Wu, Clariant Corp. (United States)
Zhong Xiang, Clariant Corp. (United States)
Eleazar Gonzalez, Clariant Corp. (United States)
Jianhui Shan, Clariant Corp. (United States)
Shuji Ding, Clariant Corp. (United States)
Wen-Bing Kang, Clariant Japan KK (Japan)
Aritaka Hishida, Clariant Japan KK (Japan)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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