Share Email Print

Proceedings Paper

Precise and accurate characterization of DUV and V-UV phase-shifting mask materials by combined V-UV spectroscopic ellipsometry and x-ray reflectometry
Author(s): Pierre Boher; Adrien Darragon; Christophe Defranoux; Jean-Claude Fouere; Jean-Louis P. Stehle
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Precise characterization of the thin films for phase-shift masks is important to guarantee the optical properties of the phase shifters. This can be accomplished by using a novel instrument that combines Grazing angle C-ray Reflectometry and V-UV Spectroscopic Ellipsometry. For example, CrONx and MoSiNx thin films can be precisely characterized for layer thickness and optical constants, and for spectral reflectance/transmittance at any photolithography wavelength of interest..

Paper Details

Date Published: 27 December 2002
PDF: 7 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.474127
Show Author Affiliations
Pierre Boher, SOPRA Inc. (United States)
Adrien Darragon, SOPRA Inc. (United States)
Christophe Defranoux, SOPRA Inc. (United States)
Jean-Claude Fouere, SOPRA Inc. (United States)
Jean-Louis P. Stehle, SOPRA Inc. (United States)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?