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Proceedings Paper

Reducing CD-SEM measurement carryover effect for 193-nm resist processes using CEq
Author(s): Haiqing Zhou; Chih-Yu Wang; Aaron Zuo; Joseph P. Pratt
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Paper Abstract

As device performance increases, the circuitry line-width has drastically reduced. The challenges for CD-SEM metrology are not only on getting precise measurements on smaller geometries but also reducing E-beam induced charging on new resist materials. A well-known later case is the 193 nm resist processes that are extremely sensitive to the electron beam dosing. In E-beam metrology, the incremental CD deviation due to repeated charging during measurement is termed as CD carryover. Most substrate materials will typically exhibit positive CD carryover; in which line-width will grow, while trench and hole sizes will shrink. However, 193 nm resist will exhibit negative CD carryover, in which line-width will shrink, while trench and hole features will grow. With optimized landing energy and beam current, this carryover can be reduced. However, the image contrast and resolution will typically suffer. In this paper, KLA-Tencor's CEq (Charging equalization) technique is presented to minimize negative CD carryover effect on patterned 193nm resist wafers. The study was carried out on hole, trench and line structures to characterize CEq technique. The results suggested that the CEq technique could minimize negative CD carryover, especially on the hole and trench photolithography process levels.

Paper Details

Date Published: 16 July 2002
PDF: 5 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473518
Show Author Affiliations
Haiqing Zhou, Texas Instruments Inc. (United States)
Chih-Yu Wang, KLA-Tencor Corp. (United States)
Aaron Zuo, KLA-Tencor Corp. (United States)
Joseph P. Pratt, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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