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Proceedings Paper

Characterizing cross-sectional profile variations by using multiple parameters extracted from top-down SEM images
Author(s): Chie Shishido; Yuji Takagi; Maki Tanaka; Osamu Komuro; Hidetoshi Morokuma; Katsuhiro Sasada
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Paper Abstract

This paper describes a new approach towards monitoring the semiconductor lithography process using critical dimension scanning electron microscopy (CD-SEM). In the lithography process, there are two important process parameters, exposure dose E and focus F. To monitor both the E and F variation, a new method for characterizing the cross-sectional profile of the photoresist pattern from the secondary electron (SE) waveform has been developed. An innovative feature of this method is that it can quantify the degree of top rounding (TR) and bottom rounding (BR) of the cross-sectional profile separately.

Paper Details

Date Published: 16 July 2002
PDF: 8 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473507
Show Author Affiliations
Chie Shishido, Hitachi, Ltd. (Japan)
Yuji Takagi, Hitachi, Ltd. (Japan)
Maki Tanaka, Hitachi, Ltd. (Japan)
Osamu Komuro, Hitachi High-Technologies Corporation (Japan)
Hidetoshi Morokuma, Hitachi High-Technologies Corporation Ltd. (Japan)
Katsuhiro Sasada, Hitachi High-Technologies Corporation Ltd. (Japan)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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