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Proceedings Paper

Advanced inspection technique for deep-submicron and high-aspect-ratio contact holes
Author(s): Miyako Matsui; Mari Nozoe; Keiko Arauchi; Atsuko Takafuji; Hidetoshi Nishiyama; Yasushi Goto
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Paper Abstract

We developed a technique using electron beams for inspection contact holes immediately after dry etching and detecting incomplete contact failures. Wafers with deep-sub-micron contact \holes that had high-aspect-ratios of 10 could be detected during practical inspection time by controlling the charging effect on the wafer surfaces. Measurements of the energy distribution in the secondary electronics exhausted from the bottom of the holes indicated that they were accelerated by the charge up voltage on the wafer surfaces. Our analysis showed that high-density electron beams must be used to charge the surfaces when the aspect ratio is high. The minimum thickness of the residual SiO2 that could be detected at the bottom of the contact holes was 2 nm using an aspect ratio of 8. Applying this mechanism to optimize the dry etching process in semiconductor manufacturing showed that we could achieve reliable process control.

Paper Details

Date Published: 16 July 2002
PDF: 9 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473499
Show Author Affiliations
Miyako Matsui, Hitachi, Ltd. (Japan)
Mari Nozoe, Hitachi, Ltd. (Japan)
Keiko Arauchi, Hitachi ULSI Systems (Japan)
Atsuko Takafuji, Hitachi, Ltd. (Japan)
Hidetoshi Nishiyama, Hitachi, Ltd. (Japan)
Yasushi Goto, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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