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Proceedings Paper

100-nm-pitch standard characterization for metrology applications
Author(s): Marco Tortonese; Jerry Prochazka; Paul Konicek; Jason Schneir; Ian R. Smith
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Paper Abstract

In this paper we present and characterize a NIST-traceable, all-silicon, 100 nm pitch structure with the necessary quality attributes to calibrate CD-SEM tools used for metrology of sub-0.25 micron semiconductor process technology.

Paper Details

Date Published: 16 July 2002
PDF: 7 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473495
Show Author Affiliations
Marco Tortonese, VLSI Standards, Inc. (United States)
Jerry Prochazka, VLSI Standards, Inc. (United States)
Paul Konicek, VLSI Standards, Inc. (United States)
Jason Schneir, VLSI Standards, Inc. (United States)
Ian R. Smith, VLSI Standards, Inc. (United States)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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