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Proceedings Paper

Compact formulation of mask error factor for critical dimension control in optical lithography
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Paper Abstract

This paper introduces a compact but rigorous theoretical formulation of the mask error factor. The results compare favorably to experimental data as well as to first-principle simulations. This work provides an insight into the MEF causes, and it explores its dependency on process settings in order to control critical dimension (CD) variation.

Paper Details

Date Published: 16 July 2002
PDF: 4 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473483
Show Author Affiliations
Haolin Zhang, Univ. of California/Berkeley (United States)
Jason P. Cain, Univ. of California/Berkeley (United States)
Costas J. Spanos, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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