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Proceedings Paper

Optimum sampling for characterization of systematic variation in photolithography
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Paper Abstract

In this paper, variability in the photolithography pattern transfer process is analyzed by means of a large number of CD measurements spread across the stepper field and across the wafer. The variability is found to be highly systematic in nature, and methods are developed to extract the parameters of this systematic variation. Knowledge of the structure of the systematic variance allows for the selection of an optimum sampling plan to best capture the variance in future measurements of wafers from the same process.

Paper Details

Date Published: 16 July 2002
PDF: 13 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473480
Show Author Affiliations
Jason P. Cain, Univ. of California/Berkeley (United States)
Haolin Zhang, Univ. of California/Berkeley (United States)
Costas J. Spanos, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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