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Proceedings Paper

DUV optical metrology for the 90-nm node, CD linearity, contacts, and corner rounding
Author(s): Louis M. Chacon; Nicholas G. Doe; Richard D. Eandi; Patrick St. Cin
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Paper Abstract

Many techniques are used to reduce k1 for the 90nm node, including phase shift masks (PSM), assist features and optical proximity correction (OPC) features. Today, in addition to CD line widths, critical measurements of assist features, contact areas, and corner rounding, are now required to verify reticle integrity. New algorithms have been developed and implemented on the KMS100 DUV optical metrology tool to correct for iso/dense bias (optical proximity correction), assess corner rounding effects, and verify contact fidelity and printability. This paper presents new CD metrology studies for Chrome-on-Glass (COG) performed on a KMS100 DUV optical tool using these new metrology algorithms.

Paper Details

Date Published: 16 July 2002
PDF: 10 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473474
Show Author Affiliations
Louis M. Chacon, Zygo Corp. (United States)
Nicholas G. Doe, Zygo Corp. (United States)
Richard D. Eandi, Zygo Corp. (United States)
Patrick St. Cin, Zygo Corp. (United States)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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