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Proceedings Paper

New approach for mapping and monitoring damascene trench depth using CD-SEM tilt imaging
Author(s): Ram Peltinov; Anthony Pan; Ophir Dror
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Paper Abstract

Due to miniaturization of semiconductor devices, ArF (193nm) lithography is likely expected to be used for sub 100nm regime. For sub 100nm devices, high NA exposure tools and various strong off-axis illumination (OAI) conditions should be used. But unlike KrF (248nm) lithography, resist pattern collapse becomes one of the most serious problems in ArF lithography. In order to solve pattern collapse problem, thin resist process is generally introduced but its poor etch resistance is an obstacle for being applied in real production process. Due to this reason, new kinds of organic BARC materials are investigated and optimized to avoid pattern collapse. As mentioned, the most important issue in ArF organic BARC is believed to be the pattern collapse problem. A number of organic BARCs were made by varying polymer, cross-linker, thermal acid generator, and additive. We tried to analyze the key factor in terms of pattern collapse. This paper is to compare the various elements of the organic BARC formulation and to discuss what brings and causes pattern collapse.

Paper Details

Date Published: 16 July 2002
PDF: 8 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473437
Show Author Affiliations
Ram Peltinov, Applied Materials (Israel)
Anthony Pan, Applied Materials, Inc. (United States)
Ophir Dror, Applied Materials (Israel)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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