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Proceedings Paper

Automated SEM metrology of wafers printed using a SCAA mask
Author(s): Sunil Desai; Takeaki Ebihara; David Levenson; Sylvia White
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Paper Abstract

The massive amount of data necessary to qualify a new 100nm generation technology can be efficiency collected using a CD-SEM and analyzed using Klarity ProData. By comparing the linewidths, space widths, and pitches printed in resists with different focus, exposure does, and numerical aperture with the measured reticle parameters, one can be determine optimal processing conditions and the required biasing rules for the new technology. The Sidewall Chrome Alternating Aperture Mask, a next generation alternating phase shift mask structure, is especially suitable for this as all relevant mask features are visible from the top surface which, however, is not planar and thus can confuse optical mask inspection tools. Resist patterns with line-space pitches from 220nm to 800nm and isolated lines - as well as the reticle - were measured sing a KLA-Tencor 8250 CD-SEM and analyzed with ProData. At the isofocal dose, the 70nm line - 150nm space reticle pattern printed with equal 110 nm lines and spaces at NA equals 0.63 on a Canon FPA-5000 ES3 248 nm step and scan tool, with a process window that overlapped those of less dense approximately 100 nm features.

Paper Details

Date Published: 16 July 2002
PDF: 8 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473415
Show Author Affiliations
Sunil Desai, KLA-Tencor Corp. (United States)
Takeaki Ebihara, Canon USA, Inc. (United States)
David Levenson, M.D. Levenson Consulting (United States)
Sylvia White, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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