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Proceedings Paper

Reduction in surface roughness and aperture size effect for XeF2 etching of Si
Author(s): Koji Sugano; Osamu Tabata
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Paper Abstract

Low etching pressure and addition of buffer gas successfully decrease the etched surface roughness and the aperture effect which represent challenges toward the application of silicon etching with XeF2 to MEMS fabrication. Etched roughness and aperture effect are extremely high and limit factors for the design rules of MEMS. By lowering the charge pressure of XeF2 from 390 to 65 Pa, the etched roughness decreased from 870.8 and 174.4 Å and the uniformity ((depth for 25 μm mask aperture)(depth for 175 μm mask aperture)× 100 %) improved from 71.3 to 88.7%. By adding N2 or reaction products including Xe and SiF4 as buffer gas, surface roughness was reduced and the surface morphology changed.

Paper Details

Date Published: 15 January 2003
PDF: 8 pages
Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003); doi: 10.1117/12.473376
Show Author Affiliations
Koji Sugano, Ritsumeikan Univ. (Japan)
Osamu Tabata, Ritsumeikan Univ. (Japan)

Published in SPIE Proceedings Vol. 4979:
Micromachining and Microfabrication Process Technology VIII
John A. Yasaitis; Mary Ann Perez-Maher; Jean Michel Karam, Editor(s)

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