Temperature measurement of thin films under ion beams bombardment has been made by a new method. 100 Kev Ar ion have been used to bombard the Al thin films deposited on Fe₈Co₃₉Ni₃₁Si₆B₁₆ non-crystal thin straps. Several data of the temperature were obtained indirectly by analyzing the substrate by means of DTA. When the intensity of the ion beams were 5 W/cm² and 12 W/cm², the temperatures were 700 K and 806 K. Starting from the conservation of energy in equilibrium state, a theoretical equation has been derived. Chosen reasonable approximation, the theoretical curve of the temperature depending on the ion beam power comparatively conforms the experimental results.

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47334

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang, Editor(s)