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Proceedings Paper

Research on the temperature of thin film under ion beam bombarding
Author(s): Yun-Fei Zhao; Shuzi Sun; Shi Jin Pang
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Paper Abstract

Temperature measurement of thin films under ion beams bombardment has been made by a new method. 100 Kev Ar ion have been used to bombard the Al thin films deposited on Fe8Co39Ni31Si6B16 non-crystal thin straps. Several data of the temperature were obtained indirectly by analyzing the substrate by means of DTA. When the intensity of the ion beams were 5 W/cm2 and 12 W/cm2, the temperatures were 700 K and 806 K. Starting from the conservation of energy in equilibrium state, a theoretical equation has been derived. Chosen reasonable approximation, the theoretical curve of the temperature depending on the ion beam power comparatively conforms the experimental results.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47334
Show Author Affiliations
Yun-Fei Zhao, Northeast Univ. of Technology (China)
Shuzi Sun, Northeast Univ. of Technology (China)
Shi Jin Pang, Beijing Lab. of Vacuum Physics (China)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang, Editor(s)

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