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Proceedings Paper

Analysis of heat flows and their impact on the reliability of high-power diode lasers
Author(s): Jens Wolfgang Tomm; Franz Rinner; Joseph Rogg; E. Thamm; Christian Ribbat; Roman Sellin; Dieter Bimberg
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Paper Abstract

Facet overheating is considered a potential source for device degradation of diode lasers. We test two different concepts for the reduction of facet temperatures of high-power diode lasers by measuring the facet temperatures by means of Raman spectroscopy. For conventional high-power broad area lasers we demonstrate the reduction of the facet overheating by the introduction of current blocking layers by a factor of 3-4. For another set of devices among them quantum well and quantum-dot lasers with almost the same device design we find a reduction of the overheating by 40 to 60 percent for the dot devices. Thus we qualify two very different but promising technological approaches for increasing device reliability.

Paper Details

Date Published: 19 June 2003
PDF: 8 pages
Proc. SPIE 4993, High-Power Fiber and Semiconductor Lasers, (19 June 2003); doi: 10.1117/12.473277
Show Author Affiliations
Jens Wolfgang Tomm, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Franz Rinner, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Joseph Rogg, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
E. Thamm, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Christian Ribbat, Technische Univ. Berlin (Germany)
Roman Sellin, Technische Univ. Berlin (Germany)
Dieter Bimberg, Technische Univ. Berlin (Germany)

Published in SPIE Proceedings Vol. 4993:
High-Power Fiber and Semiconductor Lasers
Mahmoud Fallahi; Jerome V. Moloney, Editor(s)

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