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Proceedings Paper

Nonlinear optical dynamics in GaN and related materials
Author(s): Amane Shikanai; Kouji Hazu; Takayuki Sota; Katsuo Suzuki; Yoichi Kawakami; Shigeo Fujita
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Paper Abstract

The carrier dynamics in InGaN layers and InGaN multiquantum-well (MQW) structures were studied by employing the degenerate pump and probe, time-resolved photoluminescence (PL), and white-light pump and probe measurements. The results from degenerate pump and probe measurements showed that the internal field existed in undoped in InGaN but then was screened by the electrons supplied by the Si atoms in Si-doped InGaN. The rise time of Pl in InGaN MQW obtained using the upconversion method was very fast, below 1ps, the mechanism of which is due to the carrier-carrier interaction enhanced by the residual electrons. The ΔOD spectra in InGaN MQW observed in white-light pump and probe measurements indicated that the carrier temperature was substantially higher than the lattice temperature even at 40ps after pulsed photo-pumping.

Paper Details

Date Published: 30 May 2003
PDF: 8 pages
Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); doi: 10.1117/12.473276
Show Author Affiliations
Amane Shikanai, Kyoto Univ. (Japan)
Kouji Hazu, Waseda Univ. (Japan)
Takayuki Sota, Waseda Univ. (Japan)
Katsuo Suzuki, Waseda Univ. (Japan)
Yoichi Kawakami, Kyoto Univ. (Japan)
Shigeo Fujita, Kyoto Univ. (Japan)

Published in SPIE Proceedings Vol. 4992:
Ultrafast Phenomena in Semiconductors VII
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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