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Proceedings Paper

Device model for three-terminal lateral p-n junction quantum well lasers
Author(s): Victor Ryzhii; Akira Satou; Irina Khmyrova; Tetsuhiko Ikegami; Pablo Oscar Vaccaro; Kazuyoshi Kubota; Jose M. Zanardi Ocampo; Tahito Aida
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Paper Abstract

We present a device model for a lateral p-n junction quantum-well edge-emitting laser-transistor with an extra gate contact. Such a contact provides an opportunity to control the confinement conditions of the electrons injected into the active region and, as a consequence, the threshold current and output optical power by the gate voltage. Using the proposed model, we calculate the laser dc characteristics and estimate its modulation performance. We show that the application of negative gate voltages can lead to a substantial decrease in the threshold current. The estimated cutoff modulation frequency associated with the gate recharging can be much higher than those associated with the photon and electron lifetimes.

Paper Details

Date Published: 25 July 2003
PDF: 10 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.473056
Show Author Affiliations
Victor Ryzhii, Univ. of Aizu (Japan)
Akira Satou, Univ. of Aizu (Japan)
Irina Khmyrova, Univ. of Aizu (Japan)
Tetsuhiko Ikegami, Univ. of Aizu (Japan)
Pablo Oscar Vaccaro, ATR Communication Research Labs. (Japan)
Kazuyoshi Kubota, ATR Communication Research Labs. (Japan)
Jose M. Zanardi Ocampo, ATR Communication Research Labs. (Japan)
Tahito Aida, ATR Communication Research Labs. (Japan)

Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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