Share Email Print

Proceedings Paper

Semiconductor nanowire array
Author(s): Peidong Yang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A novel vapor-liquid-solid epitaxy (VLSE) process has been developed to synthesize high-density semiconductor nanowire arrays. The nanowires generally are single crystalline and have diameters of 10-200 nm and aspect ratios of 10-100. The areal density of the array can be readily approach 1010 cm-2. Results based on Si and ZnO nanowire systems are reported here.

Paper Details

Date Published: 24 June 2002
PDF: 3 pages
Proc. SPIE 4806, Complex Mediums III: Beyond Linear Isotropic Dielectrics, (24 June 2002); doi: 10.1117/12.472986
Show Author Affiliations
Peidong Yang, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 4806:
Complex Mediums III: Beyond Linear Isotropic Dielectrics
Akhlesh Lakhtakia; Graeme Dewar; Martin W. McCall, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?