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Proceedings Paper

Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor
Author(s): Wen-Chau Liu; W. S. Lour; C. Y. Sun; Yung-Chun Lee; D. F. Guo
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Paper Abstract

A novel functional resonant-tunneling bipolar transistor (RBT) has been fabricated and demonstrated. In the proposed device, electrons are injected from emitter to base by resonant- tunneling through the minibands in the i-AlGaAs/n+-GaAs superlattice. The main features of the proposed device is the significant double negative-differential-resistance (NDR). Two high peak-to-valley current ratios of 4:1 and 2.6:1 were obtained at 77 K. In the transistor operation, a common-emitter current gain of 60 and a collector offset voltage smaller than more than 0.2 V at 77 K were obtained. As control base current increases sufficiently to cause the base-emitter junction drop beyond flat-band condition, two different transistor action regions with smaller current gains of 38 and 35 are found, respectively. Furthermore, the first peak current is nearly equal to the second peak current and much larger than the second valley current. Therefore, it is attractive to exploit the device in multiple- valued logic circuits and frequency multiplier.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47294
Show Author Affiliations
Wen-Chau Liu, National Cheng Kung Univ. (Taiwan)
W. S. Lour, National Cheng Kung Univ. (Taiwan)
C. Y. Sun, National Cheng Kung Univ. (Taiwan)
Yung-Chun Lee, National Cheng Kung Univ. (Taiwan)
D. F. Guo, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang, Editor(s)

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