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Proceedings Paper

Preparation of thin film GaAs on glass by pulsed-laser deposition
Author(s): Bruno Ullrich; Artur Erlacher; Satoshi Yano; Raoul Schroeder; Timofey G. Gerasimov; Heather J. Haugan
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Paper Abstract

One of the most straightforward methods possible is presented and investigated to form thin film GaAs. The film was deposited on unheated glass in vacuum (10-6 Torr) by the ablation from a GaAs wafer with the emission of a pulsed Nd:YAG laser (532 nm, 6 ns, 10 Hz). The photoluminescence, photocurrent, transmission and micro-Raman measurements of the films demonstrate that films with promising optoelectronic properties have been formed. Most importantly, from the viewpoint of light emitting and optoelectronic device production, the films show photoluminescence of comparable intensity with the bulk material without emissions owing to impurities, although the films show a rather flat absorption edge which indicates tail states. The observed photocurrent was in the μA/W range driven by rather moderate electric fields on the order of 100 V/cm. Concerning the material quality, the films have an extremely smooth surface as demonstrated with scanning electron microscopy. Grown GaAs films on glass substrates were amorphous evidenced by X-ray diffraction measurements, however, micro-Raman measurements showed crystalline phonon modes, suggesting that localized crystalline structure might co-exist in amorphous GaAs films.

Paper Details

Date Published: 17 October 2003
PDF: 8 pages
Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); doi: 10.1117/12.472848
Show Author Affiliations
Bruno Ullrich, Bowling Green State Univ. (United States)
Artur Erlacher, Bowling Green State Univ. (United States)
Satoshi Yano, Bowling Green State Univ. (United States)
Raoul Schroeder, Bowling Green State Univ. (United States)
Timofey G. Gerasimov, Bowling Green State Univ. (United States)
Heather J. Haugan, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 4977:
Photon Processing in Microelectronics and Photonics II
Alberto Piqué; David B. Geohegan; Friedrich G. Bachmann; Koji Sugioka; Frank Träger; Jan J. Dubowski; Peter R. Herman; Willem Hoving; Kouichi Murakami; Kunihiko Washio; Jim Fieret, Editor(s)

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