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Proceedings Paper

Plasma etching of polymers like SU8 and BCB
Author(s): Helge Mischke; Gabi Gruetzner; Mark Shaw
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Paper Abstract

Polymers with high viscosity, like SU8 and BCB, play a dominant role in MEMS application. Their behavior in a well defined etching plasma environment in a RIE mode was investigated. The 40.68 MHz driven bottom electrode generates higher etch rates combined with much lower bias voltages by a factor of ten or a higher efficiency of the plasma with lower damaging of the probe material. The goal was to obtain a well-defined process for the removal and structuring of SU8 and BCB using fluorine/oxygen chemistry, defined using variables like electron density and collision rate. The plasma parameters are measured and varied using a production proven technology called SEERS (Self Excited Electron Resonance Spectroscopy). Depending on application and on Polymer several metals are possible (e.g., gold, aluminum). The characteristic of SU8 and BCB was examined in the case of patterning by dry etching in a CF4/O2 chemistry. Etch profile and etch rate correlate surprisingly well with plasma parameters like electron density and electron collision rate, thus allowing to define to adjust etch structure in situ with the help of plasma parameters.

Paper Details

Date Published: 15 January 2003
PDF: 10 pages
Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003); doi: 10.1117/12.472734
Show Author Affiliations
Helge Mischke, Advanced Semiconductor Instruments GmbH (Germany)
Gabi Gruetzner, micro resist technology GmbH (Germany)
Mark Shaw, MicroChem Corp. (United States)

Published in SPIE Proceedings Vol. 4979:
Micromachining and Microfabrication Process Technology VIII
John A. Yasaitis; Mary Ann Perez-Maher; Jean Michel Karam, Editor(s)

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