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Proceedings Paper

High-power laser-plasma x-ray source for lithography
Author(s): Celestino J. Gaeta; Harry Rieger; I. C. Edmond Turcu; Richard Alan Forber; Kelly L. Cassidy; S. M. Campeau; Michael F. Powers; J. R. Maldonado; James H. Morris; Richard M. Foster; Henry I. Smith; M. H. Lim
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Paper Abstract

A compact x-ray source radiates 24 Watts average power of 1nm x-rays in 2 (pi) steradians. The laser produced plasma x-ray source has a 300 W laser driver which is a compact, diode-pumped solid-state Nd:YAG laser system. The x-ray conversion efficiency is 9 percent of the laser power delivered on target. The x-ray source was used to demonstrate x-ray lithography of 75 nm lines. The x-ray source is optimized for integration with a x-ray stepper to provide a complete x-ray lithography exposure tool for the manufacture of high-speed GaAs devices.

Paper Details

Date Published: 1 July 2002
PDF: 16 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472353
Show Author Affiliations
Celestino J. Gaeta, JMAR Research, Inc. (United States)
Harry Rieger, JMAR Research, Inc. (United States)
I. C. Edmond Turcu, JMAR Research, Inc. (United States)
Richard Alan Forber, JMAR Research, Inc. (United States)
Kelly L. Cassidy, JMAR Research, Inc. (United States)
S. M. Campeau, JMAR Research, Inc. (United States)
Michael F. Powers, JMAR Research, Inc. (United States)
J. R. Maldonado, JMAR Research, Inc. (United States)
James H. Morris, JMAR Research, Inc. (United States)
Richard M. Foster, JMAR Research, Inc. (United States)
Henry I. Smith, Massachusetts Institute of Technology (United States)
M. H. Lim, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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