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Proceedings Paper

Environmental data from the engineering test stand
Author(s): Leonard E. Klebanoff; Philip A. Grunow; Samual Graham Jr.; W. Miles Clift; Alvin H. Leung; Steven J. Haney
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Paper Abstract

The EUV Engineering Test Stand (ETS) has demonstrated the printing of 100 nm resolution scanned images. This milestone was achieved with the ETS operating in an initial low-power configuration using a 40 W laser combined with a Xe cluster jet. The third condenser component is referred to as 'C3' illuminator optics was removed after this low-power operation, and extensively characterized for EUV-induced contamination. EUV reflectivity data indicate a decrease in reflectivity from an initial 66 percent to approximately 48- 56 percent, with the more intensely illuminated areas of the C3 having the smaller final reflectivity. Auger electron spectroscopy indicated the observed reflectivity decrease can be largely attributed to carbon contamination, approximately 150-300 Angstrom thick depending on location. No evidence was found for optic oxidation, indicating EtOH successfully prevented EUV/H2O oxidation of the outermost Si layer during exposure to both EUV and out-of- band radiation. Measurements of the reflectivity centroid wavelength shoed a negligible change, suggesting the observed variations were due to surface contaminating and not bulk multilayer radiation damage. The carbon contamination could be removed by RF-O2 cleaning.

Paper Details

Date Published: 1 July 2002
PDF: 6 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472304
Show Author Affiliations
Leonard E. Klebanoff, Sandia National Labs. (United States)
Philip A. Grunow, Sandia National Labs. (United States)
Samual Graham Jr., Sandia National Labs. (United States)
W. Miles Clift, Sandia National Labs. (United States)
Alvin H. Leung, Sandia National Labs. (United States)
Steven J. Haney, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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