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Proceedings Paper

Lithographic evaluation of the EUV engineering test stand
Author(s): Sang Hun Lee; Daniel A. Tichenor; William P. Ballard; Luis J. Bernardez II; John E. M. Goldsmith; Steven J. Haney; Karen L. Jefferson; Terry A. Johnson; Alvin H. Leung; Donna J. O'Connell; William C. Replogle; John B. Wronosky; Kenneth L. Blaedel; Patrick P. Naulleau; Kenneth A. Goldberg; Eric M. Gullikson; Henry N. Chapman; Stefan Wurm; Eric M. Panning; Pei-yang Yan; Guojing Zhang; John E. Bjorkholm; Glenn D. Kubiak; Donald W. Sweeney; David T. Attwood Jr.; Charles W. Gwyn
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Paper Abstract

Static and scanned images of 100 nm dense features were successfully obtained with a developmental set of projection optics and a 500W drive laser laser-produced-plasma (LPP) source in the Engineering Test Stand (ETS). The ETS, configured with POB1, has been used to understand system performance and acquire lithographic learning which will be used in the development of EUV high volume manufacturing tools. The printed static images for dense features below 100 nm with the improved LPP source are comparable to those obtained with the low power LPP source, while the exposure time was decreased by more than 30x. Image quality comparisons between the static and scanned images with the improved LPP source are also presented. Lithographic evaluation of the ETS includes flare and contrast measurements. By using a resist clearing method, the flare and aerial image contrast of POB1 have been measured, and the results have been compared to analytical calculations and computer simulations.

Paper Details

Date Published: 1 July 2002
PDF: 11 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472300
Show Author Affiliations
Sang Hun Lee, Intel Corp. (United States)
Daniel A. Tichenor, Sandia National Labs. (United States)
William P. Ballard, Intel Corp. (United States)
Luis J. Bernardez II, Sandia National Labs. (United States)
John E. M. Goldsmith, Sandia National Labs. (United States)
Steven J. Haney, Sandia National Labs. (United States)
Karen L. Jefferson, Sandia National Labs. (United States)
Terry A. Johnson, Sandia National Labs. (United States)
Alvin H. Leung, Sandia National Labs. (United States)
Donna J. O'Connell, Sandia National Labs. (United States)
William C. Replogle, Sandia National Labs. (United States)
John B. Wronosky, Sandia National Labs. (United States)
Kenneth L. Blaedel, Lawrence Livermore National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Eric M. Gullikson, Lawrence Berkeley National Lab. (United States)
Henry N. Chapman, Lawrence Berkeley National Lab. (United States)
Stefan Wurm, Infineon Technologies Corp. (United States)
Eric M. Panning, Intel Corp. (United States)
Pei-yang Yan, Intel Corp. (United States)
Guojing Zhang, Intel Corp. (United States)
John E. Bjorkholm, Intel Corp. (United States)
Glenn D. Kubiak, Sandia National Labs. (United States)
Donald W. Sweeney, Lawrence Livermore National Lab. (United States)
David T. Attwood Jr., Lawrence Berkeley National Lab. (United States)
Charles W. Gwyn, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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