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Proceedings Paper

Ohmic and Schottky contacts to GaSb
Author(s): Tong S. Wu; Yan-Kuin Su; Fuh Shyang Juang; N. Y. Li; K. J. Gan
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Paper Abstract

The ohmic contact properties of Ag/AuGeNi/n-GaSb and AuGeNi/n-GaSb systems were investigated in this paper by measuring the barrier height and specific contact resistance with various sintering temperatures. The lowest specific contact resistance was about 8 X 10-3 - 8 X 10-4 cm2 for the Ag/AuGeNi/n-GaSb contact system when the sintering temperature was 400 degree(s)C for 2 min. Rutherford backscattering spectroscopy (RBS) was also used to study the interface between Ag/AuGeNi and GaSb during heat treatment. Pd/n-GaSb Schottky contacts have been studied experimentally before and after temperature annealing. I-V characteristics, Auger electron spectroscopy (AES), RBS, and x- ray diffraction patterns were used to determine and identify electrical performance of Pd/n- GaSb Schottky diodes. When the annealing temperature is increased to 450 degree(s)C, the rectifying property becomes bad. In this case, Pd interdiffusion and Ga, Sb out-diffusion to form Ga5Pd compound is very serious.

Paper Details

Date Published: 1 November 1991
PDF: 6 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47230
Show Author Affiliations
Tong S. Wu, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Fuh Shyang Juang, National Cheng Kung Univ. (Taiwan)
N. Y. Li, National Cheng Kung Univ. (Taiwan)
K. J. Gan, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang, Editor(s)

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