Share Email Print

Proceedings Paper

Study of photoelectric transformation process at p-PAn/n-Si interface
Author(s): Renkuan Yuan; Yu Xue Liu; Hong Yuan; Yong Bin Wang; Xiang Qin Zheng; Jian Xu
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Polyaniline (PAn) is a kind of stable semiconducting polymer. A p-n PAn/Si heterojunction has been prepared and the photoelectrical transformation process at the PAn/Si interface has been investigated. The factors affecting the photoelectrical characteristics of the PAn/Si heterojunction are discussed in this paper.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47219
Show Author Affiliations
Renkuan Yuan, Nanjing Univ. (China)
Yu Xue Liu, Nanjing Univ. (China)
Hong Yuan, Nanjing Univ. (China)
Yong Bin Wang, Nanjing Univ. (China)
Xiang Qin Zheng, Nanjing Univ. (China)
Jian Xu, Nanjing Univ. (China)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?