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Proceedings Paper

New semiconductor material A1xInAsySb/InAs: LPE synthesis and properties
Author(s): N. A. Charykov; Alexandr M. Litvak; Konstantin D. Moiseev; Yury P. Yakovlev
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Paper Abstract

The phase diagram of the quaternary AlInAsSb system has been investigated. These data have been used for LPE growth of the AlxIn1-xAsySb1-y solid solutions lattice-matched to InAs (with Al mole percentage in the range 0.0-0.08). A band gap was determined for this material in dependence on the composition by photoluminescence measurements. The band gap of the solid solution in the investigated range of composition corresponds to a wavelength from 3 micrometers (x equals 0.0, Eg equals 0.414 eV) to 2.5 micrometers (x equals 0.08, Eg equals 0.49 eV).

Paper Details

Date Published: 1 September 1991
PDF: 6 pages
Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); doi: 10.1117/12.47163
Show Author Affiliations
N. A. Charykov, A.F. Ioffe Physical-Technical Institute (Russia)
Alexandr M. Litvak, A.F. Ioffe Physical-Technical Institute (Russia)
Konstantin D. Moiseev, A.F. Ioffe Physical-Technical Institute (Russia)
Yury P. Yakovlev, A.F. Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 1512:
Infrared and Optoelectronic Materials and Devices
Ahmed Naumaan; Carlo Corsi; Joseph M. Baixeras; Alain J. Kreisler, Editor(s)

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