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Proceedings Paper

Pulsed laser deposition of silicon dioxide thin films with silicone targets for fabricating waveguide devices
Author(s): Masayuki Okoshi; Masaaki Kuramatsu; Narumi Inoue
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Paper Abstract

Silicon dioxide (SiO2) thin films were deposited at room temperature by 193-nm ArF excimer laser ablation of silicone in oxygen atmosphere. Only the side chains of the target were photo-dissociated during ablation to deposit Si-O bonds on a substrate in high laser fluence at about 10 J/cm2. Oxygen gas worked to oxidize the Si-O bonds ejected from the target to from SiO2 thin films at the gas pressure of 4.4 X 10-2 Torr, in addition to reducing the isolated carbon mixed into the films. We also found that the deposited rate could control refractive index of the films. The refractive index of the film deposited at 0.05 nm/pulse is greater than that of the film at 0.1 nm/pulse. Thus, a 0.2-micrometers thick SiO2 cladding film deposited at 0.1 nm/pulse was firstly formed on the whole surface of a 100- micrometers -thick polyester film, and then a 0.6 micrometers -thick SiO2 core film at 0.05 nm/pulse was fabricated in a line on the sample. The sample functioned as a waveguide device for a 633-nm line of He-Ne laser.

Paper Details

Date Published: 18 June 2002
PDF: 4 pages
Proc. SPIE 4637, Photon Processing in Microelectronics and Photonics, (18 June 2002); doi: 10.1117/12.470651
Show Author Affiliations
Masayuki Okoshi, National Defense Academy (Japan)
Masaaki Kuramatsu, National Defense Academy (Japan)
Narumi Inoue, National Defense Academy (Japan)

Published in SPIE Proceedings Vol. 4637:
Photon Processing in Microelectronics and Photonics
Jan J. Dubowski; Koji Sugioka; Malcolm C. Gower; Willem Hoving; Richard F. Haglund Jr.; Alberto Pique; Frank Traeger; Jan J. Dubowski; Willem Hoving, Editor(s)

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