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Proceedings Paper

Electroluminescence from InAsSb quantum dot light-emitting diodes grown by liquid phase epitaxy
Author(s): Anthony Krier; Xing-Ling Huang
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Paper Abstract

Electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 degree(s)C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4K and 250 mA injection current, three transitions were identified, centered at 4.01, 3.80 and 3.63micrometers , associated with the sp, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.

Paper Details

Date Published: 12 June 2002
PDF: 9 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470576
Show Author Affiliations
Anthony Krier, Lancaster Univ. (United Kingdom)
Xing-Ling Huang, Lancaster Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)

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