Proceedings Paper
Superlattice physics of digitally grown epitaxial InAlGaAs layers| Format | Member Price | Non-Member Price |
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Paper Abstract
The material physics of digitally grown InAlGaAs quaternary alloy systems are investigated using Molecular Beam Epitaxy (MBE) grown layers. With MBE, arbitrary epitaxial alloy compositions can be achieved, without changing the group III elemental constituents flux rates, by simple sequential shuttering of the relevant fluxes. Monolayer fluctuations create inhomogeneities that lead to a broadening of the photoluminescence (PL) spectra. Multiple PL peaks are also seen in select alloy compositions.
Paper Details
Date Published: 12 June 2002
PDF: 8 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470525
Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)
PDF: 8 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470525
Show Author Affiliations
J. Kenton White, Nortel Technology (Canada)
Aniket Joshi, Nortel Technology (Canada)
Marcus Extavour, Nortel Technology (Canada)
Anthony J. SpringThorpe, Nortel Technology (Canada)
Aniket Joshi, Nortel Technology (Canada)
Marcus Extavour, Nortel Technology (Canada)
Anthony J. SpringThorpe, Nortel Technology (Canada)
Joerg Hader, Univ. of Arizona (United States)
Jerome V. Moloney, Univ. of Arizona (United States)
Stephan W. Koch, Univ. of Arizona and Philipps-Univ. Marburg (Germany)
Jerome V. Moloney, Univ. of Arizona (United States)
Stephan W. Koch, Univ. of Arizona and Philipps-Univ. Marburg (Germany)
Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)
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