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Proceedings Paper

Improvement in the frequency response of 1.3-um buried heterostructure InAsP lasers
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Paper Abstract

In this paper we present results of small signal response measurements of 1.3mm strained InAsP buried heterostructure multiple quantum well lasers obtained using optical and electrical excitation. Direct modulation of the carrier population in the quantum wells with a femtosecond pulse from an Optical Parametric Oscillator yields frequency response traces with modulation bandwidths of ~ 6 GHz at biases of 1.5 and 1.8+ threshold. These results contrast with those obtained with electrical excitation for which modulation bandwidths of ~ 3 GHz are obtained at the same DC bias conditions. Analysis of the modulation traces obtained with optical excitation show that in these lasers, transport processes play a dominant role in the frequency response.

Paper Details

Date Published: 11 June 2002
PDF: 6 pages
Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470420
Show Author Affiliations
Carmen S. Menoni, Colorado State Univ. (United States)
Ovidio Anton, Colorado State Univ. (United States)
Dinesh Patel, Colorado State Univ. (United States)
G. Vaschenko, Colorado State Univ. (United States)
Gary Y. Robinson, Colorado State Univ. (United States)
Jon Michael Pikal, Univ. of Wyoming (United States)

Published in SPIE Proceedings Vol. 4643:
Ultrafast Phenomena in Semiconductors VI
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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