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Proceedings Paper

Development of 1.3 micron oxide-confined VCSELs grown by MOCVD
Author(s): Chris S. Murray; Fred D. Newman; Shangzhu Sun; J. Bridget Clevenger; David J. Bossert; Charlie X. Wang; Hong Q. Hou; Richard A. Stall
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Paper Abstract

An Emcore D180 metalorganic chemical vapor deposition (MOCVD) system was used to develop 1.3 micrometers InGaAsN/GaAs vertical cavity surface emitting lasers (VCSELs). The 1.3 micrometers VCSEL consists of double GaInNAs/GaAs quantum well active region and 1(lambda) cavity with DBRs consisting of alternating layers of GaAs/AlGaAs to obtain a large difference in index of refraction. Wavelengths ranging from 1.275 to 1.31 micrometers have been investigated. The room temperature peak power measured to date is approximately 1 mW, with a slope efficiency of 0.13 mW/mA and a threshold current of 1.5 mA.

Paper Details

Date Published: 4 June 2002
PDF: 8 pages
Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); doi: 10.1117/12.469247
Show Author Affiliations
Chris S. Murray, EMCORE Optical Devices (United States)
Fred D. Newman, EMCORE Optical Devices (United States)
Shangzhu Sun, EMCORE Corp. (United States)
J. Bridget Clevenger, EMCORE Optical Devices (United States)
David J. Bossert, EMCORE Optical Devices (United States)
Charlie X. Wang, EMCORE Optical Devices (United States)
Hong Q. Hou, EMCORE Optical Devices (United States)
Richard A. Stall, EMCORE Corp. (United States)

Published in SPIE Proceedings Vol. 4649:
Vertical-Cavity Surface-Emitting Lasers VI
Chun Lei; Sean P. Kilcoyne, Editor(s)

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