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Proceedings Paper

Direct measurement of the local temperature distribution in oxide VCSELs
Author(s): Maurizio Dabbicco; Vincenzo Spagnolo; Ida Marie Catalano; Gaetano Scamarcio
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Paper Abstract

It has been proposed that the temperature of the active layer in VCSELs could be inferred from the wavelength shift of the laser line. However, in VCSELs the laser emission wavelength is primarily selected by the cavity resonance, instead of the material gain peak. Hence the shift of the laser emission only provides an estimate of the temperature averaged over the whole cavity volume. We present a non-invasive microprobe technique for the temperature mapping of operating VCSELs, based on the analysis of the spontaneous electroluminescence emission transmitted through the DBR mirrors. While the sample is temperature stabilized and held onto a xy piezo stage, it is scanned across with an optical microscope (achieving ~2 um spatial resolution). The signal is spectrally resolved and analyzed by a CCD. By comparing the spectra taken under cw and pulsed current injection, the temperature contribution to the emission lineshape can be extracted straightforwardly. We demonstrate the capability of the proposed technique by mapping the temperature rise of a broad area proton implanted oxide VCSEL. Our results clearly demonstrate that the temperature rise is not uniform across the device cross-section, in contrast to the uniform temperature distribution measured by the laser wavelength shift method.

Paper Details

Date Published: 4 June 2002
PDF: 9 pages
Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); doi: 10.1117/12.469218
Show Author Affiliations
Maurizio Dabbicco, Univ. degli Studi di Bari/INFM (Italy)
Vincenzo Spagnolo, Univ. degli Studi di Bari/INFM (Italy)
Ida Marie Catalano, Univ. degli Studi di Bari/INFM (Italy)
Gaetano Scamarcio, Univ. degli Studi di Bari/INFM (Italy)

Published in SPIE Proceedings Vol. 4649:
Vertical-Cavity Surface-Emitting Lasers VI
Chun Lei; Sean P. Kilcoyne, Editor(s)

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