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Proceedings Paper

Beyond 850 nm: progress at other wavelengths and implications from the standard
Author(s): Jim A. Tatum; Mary K. Hibbs-Brenner; J. Robert Biard; Andrew Clark; J. Allen Cox; James K. Guenter; Robert A. Hawthorne III; Klein Johnson; Ralph H. Johnson; J. Kim; Yue Liu; Fouad Nusseibeh; Gyoungwon Park
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Paper Abstract

Born of necessity of application, the Vertical Cavity Surface Emitting Laser (VCSEL) is now found in nearly all optical networking systems based on standards such as the IEEE 802.3z and ANSI X3.t11. Reliability continues to be the hallmark of the technology, and the volume manufacturing aspects are now realized. While VCSEls satisfying optical networking standards continue to provide the highest volume applications, the advantages of the technology are beginning to enable novel optical equipment. This paper explores development of VCSELs at wavelengths from 650 to 850nm, and the commercial applications of these devices in both the data communications and optical sensing arenas. VCSELs operating at longer wavelengths are also being developed, but are not at a stage of commercialization to be discussed in this forum.

Paper Details

Date Published: 4 June 2002
PDF: 10 pages
Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); doi: 10.1117/12.469216
Show Author Affiliations
Jim A. Tatum, Honeywell Inc. (United States)
Mary K. Hibbs-Brenner, Honeywell Inc. (United States)
J. Robert Biard, Honeywell Inc. (United States)
Andrew Clark, Honeywell Inc. (United States)
J. Allen Cox, Honeywell Inc. (United States)
James K. Guenter, Honeywell Inc. (United States)
Robert A. Hawthorne III, Honeywell Inc. (United States)
Klein Johnson, Honeywell Inc. (United States)
Ralph H. Johnson, Honeywell Inc. (United States)
J. Kim, Honeywell Inc. (United States)
Yue Liu, Honeywell Inc. (United States)
Fouad Nusseibeh, Honeywell Inc. (United States)
Gyoungwon Park, Honeywell Inc. (United States)

Published in SPIE Proceedings Vol. 4649:
Vertical-Cavity Surface-Emitting Lasers VI
Chun Lei; Sean P. Kilcoyne, Editor(s)

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