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Proceedings Paper

CdS nanoparticle light-emitting diode on Si
Author(s): Ching-Fuh Lin; Eih-Zhe Liang; Sheng-Ming Shih; Wei-Fang Su
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Paper Abstract

The fabrication of CdS-nanoparticle light emitting diodes (LEDs) on Si and their properties at room temperature and variant temperatures are reported. Due to passivation of p- hydroxyl thiophenol group around nanoparticles, 86-meV spectral shift of free exciton transition at room temperature is observed. Controlled conditions for the preparation of CdS-nanoparticle LED such as heat treatment and/or with oxygen-rich environment are found to have significant influences on emission spectra. Radiative recombination of carriers trapped in oxygen-impurity level of 273 meV presents in samples prepared in oxygen-rich environment. Coalescence of nanoparticles into bulk form also occurs to contribute to increased magnitude of luminescence. Spectral behaviors of electroluminescence with varied temperature are studied.

Paper Details

Date Published: 6 June 2002
PDF: 9 pages
Proc. SPIE 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI, (6 June 2002);
Show Author Affiliations
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)
Eih-Zhe Liang, National Taiwan Univ. (Taiwan)
Sheng-Ming Shih, National Taiwan Univ. (Taiwan)
Wei-Fang Su, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4641:
Light-Emitting Diodes: Research, Manufacturing, and Applications VI
E. Fred Schubert; H. Walter Yao, Editor(s)

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