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Proceedings Paper

Determination of localization of carriers in disordered semiconductors by femtosecond spectroscopy
Author(s): Yurii E. Lozovik; A. L. Dobryakov; S. A. Kovalenko; S. P. Merkulova; S. Yu Volkov; Magnus Willander
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Paper Abstract

A new method for determination of the mobility edge in disordered semiconductors by femtosecond pump-supercontinuum probe spectroscopy is presented. The method is based on the determination of the spectral dependence of a stretched exponential relaxation in a wide spectral range of probing, h(omega) probe equals 1.6 - 3.2 eV. The method is demonstrated for porous silicon. It is shown that the relaxation parameters for porous silicon have essential spectral dependence. The spectral dependence of stretched exponential index (beta) ((omega) ) give unique information about existence and position of the mobility edge in disordered materials, and thus may be used as effective tool in manifestation of the transition from localized to delocalized relaxation regime on the femtosecond time scale.

Paper Details

Date Published: 29 May 2002
PDF: 8 pages
Proc. SPIE 4752, ICONO 2001: Ultrafast Phenomena and Strong Laser Fields, (29 May 2002); doi: 10.1117/12.469098
Show Author Affiliations
Yurii E. Lozovik, Institute of Spectroscopy (Russia)
A. L. Dobryakov, Humboldt Univ. (Germany)
S. A. Kovalenko, Humboldt Univ. (Germany)
S. P. Merkulova, Institute of Spectroscopy (Russia)
S. Yu Volkov, Institute of Spectroscopy (Russia)
Magnus Willander, Chalmers Univ. of Technology (Sweden)

Published in SPIE Proceedings Vol. 4752:
ICONO 2001: Ultrafast Phenomena and Strong Laser Fields
Vyacheslav M. Gordienko; Anatoly A. Afanas'ev; Vladimir V. Shuvalov, Editor(s)

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