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Proceedings Paper

Electrical and mechanical properties of PZT thin films prepared by hybrid process of sol-gel technique and laser ablation
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Paper Abstract

To prepare lead zirconate titanate (Pb(ZrxTi1-x)O3): PZT) thin films at a higher deposition rate and a lower substrate temperature, the PZT films were fabricated by a hybrid process of sol-gel technique and pulsed laser ablation deposition. First, one layer of PZT (about 0.12-0.14 μm) was coated on Si/SiO2/Ti/Pt substrate by sol-gel process. Then PZT film was deposited at a rate of 0.7 μm/hr by pulsed excimer laser-ablation on the substrate with one sol-gel derived PZT seed layer. A target of Pb(Zr0.52Ti0.48)O3 with 20 wt% excess PbO was used. The substrate temperature was about 500 °C. The film fabricated by the hybrid process showed the perovskite PZT phase without pyrochlore phase. The dielectric constant measured at 1 kHz was approximately 1580. The saturation polarization, remnant polarization and coercive field of 0.8 μm thick film were about 46.6 μC/cm2, 24.5 μC/cm2 and 36.4 kV/cm, respectively. The residual stresses in the thin film stacks were measured by the changes in the radius of curvature of the wafer. A relatively lower tensile stress (approximately 33 MPa) was obtained compared to the sol-gel derived PZT film. Therefore, the PZT films with good electrical and mechanical properties can be fabricated by using the hybrid process of the sol-gel technique and laser ablation.

Paper Details

Date Published: 13 November 2002
PDF: 8 pages
Proc. SPIE 4934, Smart Materials II, (13 November 2002); doi: 10.1117/12.469049
Show Author Affiliations
Lulu Zhang, National Institute of Advanced Industrial Science and Technology (Japan)
Masaaki Ichiki, National Institute of Advanced Industrial Science and Technology (Japan)
Zhanjie Wang, Tohoku Univ. (Japan)
Ryutaro Maeda, National Institute of Advanced Industrial Science and Technology (Japan)

Published in SPIE Proceedings Vol. 4934:
Smart Materials II
Alan R. Wilson, Editor(s)

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