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Proceedings Paper

Silicon-based optoelectronic filters based on a Bragg grating and P-i-N diode for DWDM optical networks
Author(s): Andrea Irace; Giovanni Breglio
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Paper Abstract

In this paper we propose an electrically controlled filter for the selection of channels in monitoring DWDM optical network. The highly selective filtering operation needed in this kind of communication systems is obtained with an all silicon device by combining the eletrical injection of free carriers in a forward biased P-i-N diode with a Bragg grating realized over the top of a Silicon on Insulator RIB waveguide. The combination of this fast electron device and the interference principle present under the periodic corrugation of the waveguide allows very fast reconfiguration of the filter. In order to increase filter performaces in terms of selectivity and crosstalk between adjacent channels, apodization of the duty-cycle of the grating is investigated; in this way the performances of the filter in terms of spectral bandwidth for 100 GHz and 50 GHz DWDM spacing become attractive and comparable to ITU specifications.

Paper Details

Date Published: 11 March 2003
PDF: 6 pages
Proc. SPIE 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration, (11 March 2003); doi: 10.1117/12.468246
Show Author Affiliations
Andrea Irace, Univ. degli Studi di Napoli Federico II (Italy)
Giovanni Breglio, Univ. degli Studi di Napoli Federico II (Italy)

Published in SPIE Proceedings Vol. 4947:
Laser Diodes, Optoelectronic Devices, and Heterogenous Integration
John Gerard McInerney; Alfred Driessen; Roel G. Baets; Ephraim Suhir, Editor(s)

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