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Proceedings Paper

Investigation of reticle defect formation at DUV lithography
Author(s): Kaustuve Bhattacharyya; William Waters Volk; Brian J. Grenon; Darius Brown; Javier Ayala
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Paper Abstract

Defect formation on advanced photomasks used for DUV lithography has introduced new challenges at low k1 processes industry wide. Especially at 193-nm scanner exposure, the mask pattern surface, pellicle film and the enclosed space between the pellicle and pattern surface can create a highly reactive environment. This environment can become susceptible to defect growth during repetitive exposure of a mask on DUV lithography systems due to the flow of high energy through the mask. Due to increased number of fields on the wafer, a reticle used at a 300-mm wafer fab receives roughly double the number of exposures without any cool down period, as compared to the reticles in a 200-mm wafer fab. Therefore, 193-nm lithography processes at a 300-mm wafer fab put lithographers and defect engineers into an area of untested mask behavior. During the scope of this investigation, an attenuated phase shift mask (attPSM) was periodically exposed on a 193-nm scanner and the relationship between the number of exposures (i.e., energy passed through the mask during exposures) versus defect growth was developed. Finally, chemical analysis of these defects was performed in order to understand the mechanism of this “growth”.

Paper Details

Date Published: 27 December 2002
PDF: 10 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468211
Show Author Affiliations
Kaustuve Bhattacharyya, KLA-Tencor Corp. (United States)
William Waters Volk, KLA-Tencor Corp. (United States)
Brian J. Grenon, Grenon Consulting, Inc. (United States)
Darius Brown, IBM Microelectronics Div. (United States)
Javier Ayala, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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