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Proceedings Paper

Dark field EUVL mask for 45-nm technology node poly-layer printing
Author(s): Pei-yang Yan
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Paper Abstract

In this study, we found that there are several advantages in extreme ultra-violet lithography (EUVL) by using a dark field mask to print lines. It includes: 1) no Bossung curve tilt and focus shift effect between the dense and isolated space aerial images; 2) small proximity effect as compared to the line aerial images; 3) small flare effect as compared to the clear field mask; 4) mask fabrication requires positive mask space bias, i.e., to size mask spaces larger than the printed target critical dimension (CD) to compensate the mask shadowing effect as apposed to the negative mask line bias (i.e., to size the mask lines smaller than the printed target CD) for the clear field mask. Positive mask bias will relax mask patterning resolution limitation.

Paper Details

Date Published: 27 December 2002
PDF: 7 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468101
Show Author Affiliations
Pei-yang Yan, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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