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Proceedings Paper

Wide-wavelength control by selective MOVPE and its applications to DFB-LD array for CWDM
Author(s): Takahiro Nakamura; Kazuo Mori
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Paper Abstract

Wide wavelength control over a range of 370 nm for simultaneously formed optical waveguides is achieved by atmospheric-pressure narrow-stripe (<2 micrometers ) selective MOVPE for a selectively grown InGaAsP/InGaAsP multiple quantum well with a small mask width variation (0-30 micrometers ). This shift is four times that obtained with growth at 75 Torr. Moreover, high-quality MQWs are obtained over a wide range of InGaAsP compositions by optimizing growth conditions. We successfully apply this growth technique to 4-channel DFB-LD arrays with 20-nm wavelength spacing for 1.3-micrometers CWDM network systems. To adjust the wide-range gain peak wavelength, we control the composition of each channel by this atmospheric-pressure narrow-stripe selective MOVPE growth. Furthermore, to control the emission wavelength, we form a precise pitch-controlled Bragg grating by electron beam lithography. These two techniques enable us to precisely control the detuning value in each channel. As a result, we obtain high-speed characteristics up to 5 GHz for all channels of the array and throughput of more than 10 Gb/s in the DFB-LD array. Moreover, low electrical cross-talk between neighboring LDs in the array- as low as 25 dB up to 5 GHz- is obtained using an electrically isolated structure with a deep trench reaching the semi-insulating substrate for each channel.

Paper Details

Date Published: 22 May 2002
PDF: 8 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467939
Show Author Affiliations
Takahiro Nakamura, NEC Corp. (Japan)
Kazuo Mori, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

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