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Proceedings Paper

High-brightness diode lasers with high d/gamma ratio obtained in asymmetric epitaxial strutures
Author(s): Iulian B. Petrescu-Prahova; Thomas Moritz; John Riordan
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Paper Abstract

High d/G allows high total emitted power and avoids high power density in the active QW layer where power induced degradation processes occur. d/G is scaled up to 0.84 micrometers in a series of four 7 nm thick single QW AlGaAs structures, designed for 810 nm wavelength. Two structures have an asymmetric design that includes an optical trap next to the active region. The optical trap captures a part of the total radiation flux and reduces the confinement factor. One of asymmetrical structures includes an optical wall built into the p cladding layer that further pushes the radiation flux toward the trap. Device lengths are inversely proportional to the confinement factor; therefore all lasers optimally operate at the same current density. All have approximately the same threshold current density equal to 250 A/cm2. For the 0.84 micrometers d/G case, the nominal length is 2.8 mm, the attenuation coefficient is 0.7 cm-1 and the slope efficiency is 0.96 W/A. The thermal rollover maximum power is greater than 8 W/100micrometers .

Paper Details

Date Published: 22 May 2002
PDF: 7 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467935
Show Author Affiliations
Iulian B. Petrescu-Prahova, High Power Devices, Inc. (United States)
Thomas Moritz, High Power Devices, Inc. (United States)
John Riordan, High Power Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

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