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Proceedings Paper

PMJ 2002 Panel Discussion Review: Lithography strategy from 90- to 65-nm nodes -- ArF, F2, or EPL?
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Paper Abstract

We discussed the following topics at the panel discussion of Photomask Japan 2002. 1) Pushing the limit of ArF lithography: How far ArF lithography will extend? 2) Current status and issues for F2 lithography, 3) Current status and issues for EPL, 4) Current status and issues for F2 and NGL masks, 5) Lithography tool selection from 90- to 65- nm nodes. ArF lithography could extend to 65-nm node by using alternating phase shift masks. F2 lithography and EPL are not yet established and we need to solve many issues for practical applications. The choice of lithography tools in 65-nm node depends on devices and layers. Multiple lithography tools might be used in 65-nm node.

Paper Details

Date Published: 27 December 2002
PDF: 13 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002);
Show Author Affiliations
Hiroyoshi Tanabe, Elpida Memory, Inc. (Japan)
Yoshinori Nagaoka, KLA-Tencor Japan Ltd. (Japan)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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