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Proceedings Paper

Wafer-bonded InGaAs/silicon avalanche photodiodes
Author(s): Alexandre Pauchard; Phil Mages; Yimin Kang; Martin Bitter; Z. Pan; D. Sengupta; Steve Hummel; Yu-Hwa Lo; Paul K. L. Yu
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Paper Abstract

Wafer-bonded avalanche photodiodes (APDs) combining InGaAs for the absorption layer and silicon for the multiplication layer have been fabricated. The reported APDs have a very low room-temperature dark current density of only 0.7 mA/cm2 at a gain of 10. The dark current level is as low as that of conventional InGaAs/InP APDs. High avalanche gains in excess of 100 are presented. The photodiode responsivity at a wavelength of 1.31 micrometers is 0.64 A/W, achieved without the use of an anti-reflection coating. The RC-limited bandwidth is 1.45 GHz and the gain-bandwidth product is 290 GHz. The excess noise factor F is much lower than that of conventional InP-based APDs, with values of 2.2 at a gain of 10 and 2.3 at a gain of 20. This corresponds to an effective ionization rate ratio keff as low as 0.02. The expected receiver sensitivity for 2.5 Gb/s operation at (lambda) = 1.31 um using our InGaAs/silicon APD is -41 dBm at an optimal gain of M = 80.

Paper Details

Date Published: 21 May 2002
PDF: 7 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467674
Show Author Affiliations
Alexandre Pauchard, Nova Crystals, Inc. (United States)
Phil Mages, Univ. of California/San Diego (United States)
Yimin Kang, Univ. of California/San Diego (United States)
Martin Bitter, Nova Crystals, Inc. (United States)
Z. Pan, Nova Crystals, Inc. (United States)
D. Sengupta, Nova Crystals, Inc. (United States)
Steve Hummel, Nova Crystals, Inc. (United States)
Yu-Hwa Lo, Univ. of California/San Diego and Nova Crystals, Inc. (United States)
Paul K. L. Yu, Univ. of California/San Diego (United States)

Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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