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Proceedings Paper

Type-II InAs/GaSb superlattices and detectors with lambda c >18m
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Paper Abstract

The authors report the most recent advances in type II InAs/GaSb superlattice materials and photovoltaic detectors. Lattice mismatch between the substrate and the superlattice has been routinely achieved below 0.1%, and less than 0.0043% as the record. The FWHM of the zeroth order peak from x-ray diffraction has been decreased below 50 arcsec and a record of less than 44arcsec has been achieved. High performance detectors with 50% cutoff beyond 18 micrometers up to 26 micrometers have been successfully demonstrated. The detectors with a 50% cut-off wavelength of 18.8 micrometers showed a peak current responsivity of 4 A/W at 80K, and a peak detectivity of 4.510 cm x Hz1/2/W was achieved at 80K at a reverse bias of 110mV under 300K 2(pi) FOV background. Some detectors showed a projected 0% cutoff wavelength up to 28~30 micrometers . The peak responsivity of 3Amp/Watt and detectivity of 4.2510 cm x Hz1/2/W was achieved under -40mV reverse bias at 34K for these detectors.

Paper Details

Date Published: 21 May 2002
PDF: 6 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467673
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Yajun Wei, Northwestern Univ. (United States)
Aaron Gin, Northwestern Univ. (United States)
Gail J. Brown, Air Force Research Lab. (United States)
Daniel K. Johnstone, Air Force Office of Scientific Research (United States)

Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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