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Proceedings Paper

Surface leakage current in HgCdTe photodiodes
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Paper Abstract

This study describes fabrication of heterojunction HgCdTe photodiodes passivated with a wide band-gap CdTe epitaxial layer. The current-voltage characteristics of these photodiodes with and without passivation have been investigated. It is shown that for reverse bias the measured I-V characteristics can be explained by a surface tunneling current and surface generation current. The breakdown voltage is observed to decrease monotonically with increasing temperature, a trend that is directly opposite to what would be expected from a pure tunneling mechanism. Additional information on surface limitations is obtained from analyzing the R0A product as a function of temperature. The performance of both type of p-n VLWIR HgCdTe photodiodes (with and without the passivating layer) have been compared.

Paper Details

Date Published: 21 May 2002
PDF: 9 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467671
Show Author Affiliations
Jakub Wenus, Military Univ. of Technology (Poland)
Jaroslaw Rutkowski, Military Univ. of Technology (Poland)
Antoni Rogalski, Military Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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