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Proceedings Paper

Noninvasive electrical characterization of semiconductor and interface
Author(s): Samir Kasouit; Bernard Drevillon; Joao Conde; Hyun Jong Kim; Jean Paul Kleider; Regis Vanderhaghen
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Paper Abstract

The Spectroscopic Ellipsometry and the Time Resolved Microwave Conductivity (TRMC) are efficient tools for in-situ non invasive characterizations during the growth of semiconductors and interfaces. From ellipsometry, one estimates the optical absorption, structural composition of the material in the bulk and near the interface. The TRMC measures the transient microwave reflectivity induced by carriers photogenerated by a pulsed laser. From TRMC, one may estimate the mobility of the carriers in a thin film or in bulk materials, the carrier lifetime in the bulk or near the surface. Particularly, we characterize microcrystalline silicon : electron and hole mobility, electron mobility inside the grain, trapping.

Paper Details

Date Published: 21 May 2002
PDF: 8 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467666
Show Author Affiliations
Samir Kasouit, Ecole Polytechnique (France)
Bernard Drevillon, Ecole Polytechnique (France)
Joao Conde, Instituto Superior Tecnico (Portugal)
Hyun Jong Kim, Ajou Univ. (South Korea)
Jean Paul Kleider, Ecole Superieure d Electricite (France)
Regis Vanderhaghen, Ecole Polytechnique (France)

Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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