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Proceedings Paper

Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy
Author(s): Wei Li; Markus Pessa; Tommy Ahlgren; James Dekker
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Paper Abstract

Positron-annihilation measurements and nuclear reaction analysis (utilizing the 14N(d, p)15N and 14N(d, a)12C reactions) in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used to study the defects in as-grown Ga(In)NAs materials grown by molecular beam epitaxy (MBE) using a radio-frequency (rf) plasma nitrogen source. Our data unambiguously show the existence of vacancy-type defects, which we attribute to Ga vacancies, and nitrogen interstitials in the as-grown Nitride-Arsenide epilayers. These point defects, we believe, are responsible for the low luminescence efficiency of as-grown Ga(In)NAs materials and the enhanced diffusion process during annealing.

Paper Details

Date Published: 21 May 2002
PDF: 6 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467665
Show Author Affiliations
Wei Li, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)
Tommy Ahlgren, Univ. of Helsinki (Finland)
James Dekker, Helsinki Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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