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Proceedings Paper

InAs/InGaSb Type-II strained layer superlattice IR detectors
Author(s): Vaidya Nathan; K. Alex Anselm; C.H. Thompson Lin; Jeffrey L. Johnson
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Paper Abstract

InAs/InGaSb type2 strained layer superlattice (SLS) combines the advantages of III-V materials technology with the strong, broad-band absorption, and wavelength tunability of HgCdTe. In fact, the significantly reduced tunneling and Auger recombination rates in SLS compared to those in HgCdTe should enable SLS detectors to outperform HgCdTe. We report the results of our investigation of InAs/InGaSb type2 strained layer superlattices (SLS)for LWIR photovoltaic detector development. We modeled the band structure, and absorption spectrum of SLS's, and achieved good agreement with experimental data. We systematically investigated the SLS growth conditions, resulting in good uniformity, and the elimination of several defects. We designed, developed and evaluated 16x16 array of 13 micron cutoff photovoltaic detectors. Photodiodes with cutoff wavelengths of 13 and 18microns were demonstrated, which are the longest wavelengths demonstrated for this material system. Quantum efficiencies commensurate with the superlattice thickness were demonstrated and verified at AFRL. The electrical properties show excessive leakage current, most likely due to trap-assisted tunneling.

Paper Details

Date Published: 21 May 2002
PDF: 14 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467663
Show Author Affiliations
Vaidya Nathan, Air Force Research Lab. (United States)
K. Alex Anselm, Applied Optoelectronics, Inc. (United States)
C.H. Thompson Lin, Applied Optoelectronics, Inc. (United States)
Jeffrey L. Johnson, Applied Optoelectronics, Inc. (United States)

Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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