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Proceedings Paper

Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared
Author(s): Gail J. Brown; Joseph E. Van Nostrand; S. M. Hedge; W. J. Siskaninetz; Qianghua Xie
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Paper Abstract

The optical properties of an (formula available in paper) type-II superlattice lattice matched to InP(001) was characterized by photo luminescence and near infrared photoresponse. The samples were designed for optical emission near 1.8micrometers and were grown by molecular beam epitaxy. At 4K, a strong type-II luminescence at 1.8micrometers (689meV0 with a full width at half maximum (FWHM) of 18 meV was observed. Similarly, the onset of the band edge photoresponse occurred at 1.8micrometers (693 meV) at 10K. We believe this to be the first observation of both luminescence and photoresponse from the InGaAs/GaAsSb/InP materials system grown by any technique.

Paper Details

Date Published: 21 May 2002
PDF: 6 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467662
Show Author Affiliations
Gail J. Brown, Air Force Research Lab. (United States)
Joseph E. Van Nostrand, Air Force Research Lab. (United States)
S. M. Hedge, Air Force Research Lab. (United States)
W. J. Siskaninetz, Air Force Research Lab. (United States)
Qianghua Xie, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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